The presence of free electrons in traditional planar Schottky metal layer negatively affects leakage current and reverses recovery time.

The design of TSBD transfers the electric field strength from the surface to the depth of the trench to avoid the free state of impurities on the surface of the germanium under high pressure and high heat, which affects the voltage and current leakage of Schottky. Meanwhile, the internal heat dissipation of the crucible is more favorable to high-temp diffusion.

The advantage of TSBD is the surface without electric field, which is more capable in the usage under high voltage. In addition, very low V (f) value can be applied to the design of high current and high voltage, so as to increase the switching speed.